Molecular Beam Epitaxy (MBE) for Research and Device Fabrication
نویسندگان
چکیده
منابع مشابه
Basics of Molecular Beam Epitaxy (MBE)
A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...
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The (3 1 1)A and (5 1 1)A planes of GaAs were used for the growth of high-quality two-dimensional hole gas (2DHG) and electron gas (2DEG) structures, respectively. A back-gated, inverted interface, AlGaAs/GaAs structure in which a 2DHG or a 2DEG was embedded was studied. This particular structure enabled the two-dimensional carrier concentration to be varied over two orders of magnitude in a si...
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Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...
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Quasi-one-dimensional quantum wires have been formed in V-grooves on GaAs substrates. A new fabrication technique based on in situ thermal etching of masked substrates and subsequent overgrowth by molecular beam epitaxy has been developed. The device geometries enabled formation of low-resistance ohmic contacts. Two-terminal magnetoresistance measurements of single-wire devices show transport q...
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1984
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.5.298